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本工作采用HI-13串列加速器产生的32S粒子(能量80MeV,流强20nA)辐照CR-39样品,密度分别为108、109cm-2。将辐照过的样品放在清洁环境中。再将CR-39样品在氢氧化钠溶液中腐蚀蚀刻2min后,用紫外灯照射样品2h,最后在氢氧化钠溶液中蚀刻不同的时间。由于氢氧化钠溶液的浓度、温度和样品的蚀刻时间都会影响径迹孔的孔形状,本项目还采用了四因素三变量正交实验表L43来最佳化蚀刻实验的温度、浓度和时间。
In this work, 32S particles (energy 80MeV, flow 20nA) produced by HI-13 tandem accelerator were used to irradiate CR-39 samples with the density of 108 and 109cm-2 respectively. Place the irradiated sample in a clean environment. After etching the CR-39 sample in sodium hydroxide solution for 2 minutes, the sample was irradiated with a UV lamp for 2 hours, and then the sodium hydroxide solution was used for etching for different time. Since the concentration of sodium hydroxide solution, the temperature and the etching time of the sample all affect the pore shape of the track hole, a four-factor, three-variable orthogonal experiment table L43 is also used to optimize the temperature, concentration and time of the etching experiment.