The fabrication and characterization of 4H-SiC power UMOSFETs

• 作 者: 宋庆文 张玉明 韩吉胜 Philip Tanner Sima Dimitrijev 张义门 汤晓燕 郭辉
• 机 构: School of Technical Physics,Xidian University,Key Laboratory of Wide Band Gap Semiconductor Material
• 出 处: Chinese Physics B
• 发表日期: 2013年02期
• 关键词: fabrication trench drain breakdown doping thick drift attractive length Electron

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors(UMOSFETs) is reported in this paper.The device has a 15-μm thick drift layer with 3×1015 cm-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage(Vth) is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance(Rsp-on) is 181 mΩ·cm2 at Vg = 40 V and a blocking voltage(BV) is 880 V(IDS = 100 μA@880V) at Vg = 0 V.

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-μm thick drift layer with 3 × 1015 cm-3 N-type doping concentration and a 3.1 μm channel length. The measured on-state current-drain current density is 65.4 A / cm2 at Vg = 40 V and VDS = 15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics A specific on-resistance (Rsp-on) is 181 mΩ · cm2 at Vg = 40 V and a blocking voltage (BV) is 880 V (IDS = 100 μA @ 880V) at Vg = 0V.