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在磁场与阴极表面平行的二极管装置中，使在Ｅ×Ｂ方向漂移的电子流自身围旋形成电子捕集阱，可以把这样的二极管装置当作磁控管溅射源。有关杆状阴极或空腔阴极工作在轴向磁场中的同轴圆柱形磁控管用射源的报导已发表几年了。然而，它们的性能由于东端损失而受到限制，但是如果经过适当的磁场整形或合适放置电子反射面来消除末端损失的话，其优良性能就表现出来了。甚至在低压强下，也能得到几乎与电压无关的大电流和高溅射率，这个特征就是我们为什么把二极管作为磁控管工作模式的根据，本文评述了磁控管模式特别是圆柱形磁控管模式中直流溅射源工作的基本原理，也评述了作为溅射源的这些装置的重要性质。
In a diode device with a magnetic field parallel to the cathode surface, such a diode device can be used as a magnetron sputtering source by electronically traversing the electron current drifting in the E x B direction itself. Reports of sources of coaxial cylindrical magnetrons for rod-shaped or cavity cathodes operating in axial magnetic fields have been published for several years. However, their performance is limited by the loss of the east end, but their superior performance is apparent if the proper magnetic field shaping or proper positioning of the electronically reflective surface is used to eliminate the end loss. Even at low pressure, almost no voltage-related high current and high sputtering rate are obtained. This feature is why we use the diode as a magnetron mode of operation. This paper reviews the magnetron modes, especially the cylindrical magnet The basic principle of DC sputtering source operation in a controlled mode also comments on the important properties of these devices as sputtering sources.