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对于离子注入MOS结构的研究,要求采用非破坏性的方法来测定硅中注入离子的掺杂分布。迪耳等人采用MOSC_(最大)/C_(最小)方法的热氧化来测量杂质的再分布。因为它基于假设不均匀掺杂浓度的理论。近来格尔得和佐塔等人的研究表明:从MOS电容—电压关系曲线能够计算出掺杂分布随结深变化的关系曲线。之后,结C—V法中使用的同样的方程也适用于MOS结构,只需要稍微校正与表面的距离。利用这个关系,格尔得和尼柯林等人用脉冲MOS电容—电压方法来测量硅中的杂质分布。这里
Research on ion-implanted MOS structures requires a non-destructive method to determine the doping profile of implanted ions in silicon. Diehl et al. Used the MOSC_ (max) / C_ (min) method for thermal oxidation to measure the redistribution of impurities. Because it is based on the theory of assuming an uneven doping concentration. Recent studies by Gerd and Zotta have shown that the doping profile can be calculated from the MOS capacitance-voltage curve as a function of the junction depth. After that, the same equation used in the junction C-V method also applies to the MOS structure with only a slight correction of the distance from the surface. Using this relationship, Gerd and Niccolin et al. Measured the impurity distribution in silicon using a pulsed MOS capacitor-voltage method. Here