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本文报道了用水平三温区炉制备高纯砷化镓单晶的工艺和砷化镓单晶热处理前后的电学性质。两年来的实验结果表明,经过适当的热处理,砷化镓单晶的液氮电子迁移率在1975和1976两年分别达到了38,500和58,600厘米~2/伏·秒。就我们所知,后面那个数值比文献中迄今报道的为高。用 Brooks-Herring 公式算出浅施主浓度 N_D 和总受主浓度 N_A,将二者作图,发现能符合于我们在前一文中提出的 n 型砷化镓的结构缺陷模型,从而对该模型提供了进一步的支持。最后,根据热处理时间对电学性质的影响,对热处理反应机理进行了分析,并提出了一些初步看法,与 Weiner 和 Jordon 原先提出的机理有所不同。
This paper reports the preparation of high purity gallium arsenide single crystal with a horizontal three temperature zone furnace and the electrical properties before and after heat treatment of gallium arsenide single crystal. Two years of experimental results show that after proper heat treatment, the gallium arsenide single crystal liquid nitrogen electron mobility reached 38,500 and 58,600 cm 2 / V · sec in 1975 and 1976 respectively. To our knowledge, the latter figure is higher than reported in the literature so far. The shallow donor concentration N_D and the total acceptor concentration N_A were calculated using the Brooks-Herring formula and the two were plotted and found to be consistent with the structural defect model of n-type gallium arsenide that we proposed in the previous article, thus providing Further support. Finally, based on the influence of heat treatment time on the electrical properties, the reaction mechanism of heat treatment is analyzed and some preliminary views are proposed, which are different from those originally proposed by Weiner and Jordon.