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我们用硅光电池试制了激光功率计,见图1。用于0.5μ～1.1μ激光功率的测量,可测功率范围是0.1mW～100mW,测量误差小于10%。硅光电池输出特性之一是它的短路电流与入射光强成正比,而且其短路电流的温度系数较小,在20℃时,仅为2μA/℃,即变化率为0.1%/℃,室温变化±20℃引进的误差为2%。硅光电池的另一输出特性是开路电压与入射光强的对数成正比,但开路电压的温度系数很大,在20℃时约为3mV/℃,即变化率为0.8%/℃,室温变化±20℃引
We use a silicon photovoltaic cell prototype laser power meter, shown in Figure 1. For 0.5μ ~ 1.1μ laser power measurement, measurable power range is 0.1mW ~ 100mW, measurement error is less than 10%. One of the output characteristics of a silicon photovoltaic cell is that its short-circuit current is proportional to the incident light intensity and its temperature coefficient of short-circuit current is small, which is only 2 μA / ° C at 20 ° C, that is, the rate of change is 0.1% / ° C. ± 20 ℃ The introduction of the error of 2%. The other output characteristic of silicon photovoltaic cells is that the open circuit voltage is proportional to the logarithm of incident light intensity, but the temperature coefficient of the open circuit voltage is very large, which is about 3mV / ° C at 20 ° C, that is, the change rate is 0.8% / ° C. ± 20 ℃ cited