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报告一种新型电子清洗工艺。该工艺采用了被命名为DZ－l和DZ－2的两种新型电子清洗剂分别与95％体积的去离子水配制成清洗液，先后用超声波清洗。用高频C－V测试和原子吸收光谱分析研究了清洗效果。用该工艺清洗过的硅片生长二氧化硅层，其固定电荷密度10“cm－‘数量级（见图1
Report a new type of electronic cleaning process. The process uses two new electronic cleaning agents, named DZ-1 and DZ-2, each formulated as a cleaning fluid with 95% deionized water, followed by ultrasonic cleaning. The cleaning effect was investigated by high-frequency C-V test and atomic absorption spectroscopy. A silicon wafer is grown using this process to grow a silicon dioxide layer of a fixed charge density on the order of 10 cm-1 (see Figure 1