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This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes.Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement.The device fabrication was based on a 12μm thick drift layer with an N-type doping concentration of 8 1015cm 3. PC regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.
This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. Device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8 1015 cm 3. PC regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.