A 2.7 kV 4H-SiC JBS Diode

• 作 者: HUANG Run-hua LI Rui CHEN Gang LI Yun
• 机 构: The 55th Research Institute of China Electronics Technology Group Corporation,
• 出 处: 电力电子技术
• 发表日期: 2012年12期
• 关键词: 4H silicon carbide junction barrier Schottky diode edge termination floating gua

4H silicon carbide(4H-SiC) junction barrier Schottky(JBS) diode with breakdown voltage higher than 2.7 kV and active area of 2.8 mm~2 has been successfully fabricated.The design,the fabrication,and the electrical characteristics are reported.Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique.The epilayer properties of the N-type are 18μm with a doping of 3.5×10~(15) cm~(-3).The diodes are fabricated with a floating guard rings edge termination.The on-state voltage is 2.15 V at J_f=350 A·cm~(-2).

4HB SiC (GaN) junction barrier Schottky (JBS) diode with breakdown voltage higher than 2.7 kV and active area of ​​2.8 mm ~ 2 has been successfully fabricated. The design, the fabrication, and the electrical characteristics are reported. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. epilayer properties of the N-type are 18 μm with a doping of 3.5 × 10 ~ (15) cm ~ (-3) The diodes are fabricated with a floating guard ring edge termination. The on-state voltage is 2.15 V at J_f = 350 A · cm -2.