Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial lay
Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular