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Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra.The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature,commonly assumed to be more favourable for As activation,has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39),(ii) the density of V Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers,and (iii) the V Hg prefers forming the V Hg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density,which makes it difficult to annihilate V Hg in As-doped epilayers.As a result,the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.
Based on our previous work, the influence of annealing conditions on the impurity species in-situ arsenic (As) -doped Hg 1 × Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by patterned photoluminescence spectra. results show that (i) the doped-As acting as asymptotic shallow / deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature, has assumed to be more favourarable for As activation, has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39), (ii) the density of V Hg has an evident effect on the determination of band gap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers, and (iii) the VHg prefers forming the VHg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density, which makes it difficult to annihilate V Hg in As-doped epilayers. As a result, the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.