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过去广泛地研究过用二氧化硅作掩蔽的硅选择性外延生长,但二氧化硅在氢气中易性能劣化,在硅选择性外延时二氧化硅要挥发,用氮化硅作掩蔽的选择外延可以避免这些问题。选择性外延是在硅衬底的所选择的区域作硅外延,其他区域则不外延,这种工艺在集成电路,尤其是互补电路中甚为重要。用四氯化硅的氢还原方法,在卧式反应器中通过氮化硅的窗口外延淀积硅。卧式反
Silicon-selective epitaxial growth of silicon has been studied extensively in the past, but silica is susceptible to deterioration in hydrogen, silicon dioxide is selectively volatilized during silicon-selective epitaxy, and silicon nitride is used as a masking option Outreach can avoid these problems. Selective epitaxy is a silicon epitaxy in the selected area of the silicon substrate, while other areas are not epitaxial, this process is very important in integrated circuits, especially complementary circuits. Silica is epitaxially deposited through a window of silicon nitride in a horizontal reactor using hydrogen reduction of silicon tetrachloride. Horizontal anti