Constant and steplike behavior of the cross-section dimension ofSi quantum wires and quantum confine

• 作 者: 刁鹏 李经建 蔡生民 张树霖
• 机 构: Department of Chemistry, Hebei Teachers University, Shijiazhuang 050016, China,College of Chemistry
• 出 处: Chinese Science Bulletin
• 发表日期: 1996年24期
• 关键词: confinement anodic visible recombination photon ectron dissolution Wafer indirec

Silicon is an indirect semiconductor with a band-gap of 1.11 eV.Therefore,there isno optical recombination in bulk silicon in the visible region.Porous silicon(PS)preparedby anodic oxidation at constant current density in HF solution has aroused great researchinterest since Canham reported its strong visible photoluminescence(PL)at roomtemperature in 1990.Many experimental results indicated that PL of PS is mainlyattributed to the quantum confinement effect(QCE)in PS layer.Unlike the lay-

Silicon is an indirect semiconductor with a band-gap of 1.11 eV.Therefore, there is no optical recombination in bulk silicon in the visible region. Porous silicon (PS) preparedby anodic oxidation at constant current density in HF solution has aroused great research interest since Canham reported Its strong visible photoluminescence (PL) at room temperature in 1990. Many experimental results indicated that PL of PS is mainlyattributed to the quantum confinement effect (QCE) in PS layer .Unlike the lay-