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本文研究了以低压化学气相淀积方法生长ＰＳＧ表面钝化膜中磷的含量对横向ＰＮＰ管放大倍数的影响。给出了工艺的实验数据，得到一个为适用于集成电路中横向ＰＮＰ管钝化膜的最佳工艺数据，在这种工艺条件下，得到ＰＳＧ膜中含磷量为４Ｗｔ．％。
In this paper, the effect of phosphorus content in PSG surface passivation film grown by low pressure chemical vapor deposition on the magnification of lateral PNP tubes was studied. The experimental data of the process are given and the best process data for the passivation film of lateral PNP tube in the integrated circuit is obtained. Under such process conditions, the content of phosphorus in the PSG film is 4Wt. %.