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采用瞬间蒸发技术在温度为473 K的玻璃基体上沉积了厚度为800 nm的Ag掺杂Bi2(Te0.95Se0.05)3热电薄膜。利用X射线衍射(XRD)技术对薄膜的物相结构进行表征,采用表面粗糙度测量仪测定薄膜厚度,薄膜的电阻率采用四探针法在室温下进行测量,在室温下对薄膜的Seebeck系数进行表征。Ag的掺杂浓度为0.2%,热电功率因子提高到16.1 mW/(cm.K2)。Ag掺杂浓度从0.25%增加到0.5%,薄膜为p型半导体,热电功率因子呈减少的趋势。
An Ag-doped Bi2 (Te0.95Se0.05) 3 thermoelectric thin film with a thickness of 800 nm was deposited on a glass substrate with a temperature of 473 K by instantaneous evaporation technique. The phase structure of the film was characterized by X-ray diffraction (XRD). The film thickness was measured by surface roughness measuring instrument. The resistivity of the film was measured by four-probe method at room temperature. The Seebeck coefficient Characterization. The doping concentration of Ag is 0.2% and the thermoelectric power factor is increased to 16.1 mW / (cm.K2). Ag doping concentration increased from 0.25% to 0.5%, the film is a p-type semiconductor, the thermoelectric power factor showed a decreasing trend.