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本文首次报导了用MBE法在硅衬底上生长的1μm栅GaAs/AlGaAs调制掺杂场效应晶体管(MODFET)的微波特性。室温下,硅上这种结构的最大跨导为170mS/mm,GaAs上这种类型结构的跨导为200～250mS/mm,两者性能相当。77K下,在这些结构上没有看到下塌现象,得到的跨导都是270mS/mm。根据室温下微波S参数的测量,在Si上生长的这些GaAs/AlGaAsMODFET的电流增益截止频率为15GHz,它与GaAs衬底上生长的相同器件得到的12～15GHz相当。由高频等效电路模拟,观测到Si和GaAs上生长的所有参数的差别都非常小,这充分证明Si衬底上的GaAs完全适用于做各种器件。
This paper reports for the first time the microwave characteristics of a 1 μm gate GaAs / AlGaAs modulation doped field effect transistor (MODFET) grown on a silicon substrate by the MBE method. At room temperature, the maximum transconductance of this structure on silicon is 170 mS / mm, and the transconductance of this type of structure on GaAs is 200-250 mS / mm, both of which have the same performance. At 77K, no collapse occurred on these structures and the resulting transconductance was 270 mS / mm. Based on measurements of microwave S parameters at room temperature, these GaAs / AlGaAs MOSFETs grown on Si have a current gain cut-off frequency of 15 GHz, which is equivalent to 12-15 GHz obtained on the same device grown on a GaAs substrate. Simulated by the high-frequency equivalent circuit, it is observed that the difference of all the parameters of growth on Si and GaAs is very small, which fully proves that GaAs on the Si substrate is fully suitable for various devices.