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在晶闸管的pin二极管模型基础上,提出了薄发射区晶闸管新结构.分析了P发射区杂质总量Q_E对晶闸管通态压降V_T的影响,导出了Q_E与V_T的关系式.分析计算表明,对一确定的宽度W_B和厚度W_P,在某一Q_E下有V_T极小值点存在;当W_P小于等于0.1μm时,随着Q_E的减小,V_T单调下降并趋于一几乎不变的值;当Q_E大于某一值时,V_T与W_P无关,而是随基区宽度及发射层杂质总量的增加而增加.实验结果还表明,用LPCVD原位掺杂制作的薄发射区晶闸管芯片样品,与普通晶闸管相比,有较好的速度特性.
Based on the pin diode model of the thyristor, a new structure of the thyristor in the thin emission region is proposed. The influence of the total amount of impurities in the P emitter region on the on-state voltage drop V_T of the thyristor is analyzed and the relation between Q_E and V_T is derived. For a given width W_B and thickness W_P, there is a minimum point of V_T at a certain Q_E. When W_P is less than or equal to 0.1μm, V_T monotonically decreases with the decrease of Q_E and tends to an almost constant value ; When Q_E is greater than a certain value, V_T has nothing to do with W_P, but increases with the width of the base region and the total amount of impurities in the emissive layer. The experimental results also show that thin-emitter thyristor chip samples prepared by in-situ doping with LPCVD , Compared with ordinary thyristor, a better speed characteristics.