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本文介绍一种研究a-Si:H/a-SiN:H界面层电子积累特性的新方法,所用样品为Cr/a-SiN:H/a-Si:H/(n+)a-Si:H/AI.测试表明,a-Si:H/a-SiN:H界面是一个电子积累层,其电子面密度为3.2×10~(11)/cm~2,并且界面层中的电子面密度随外加电压的增加而线性增加。实验结果与理论分析相一致。
This paper presents a new method for studying the electron accumulation characteristics of a-Si: H / a-SiN: H interfacial layer. The samples used are Cr / a-SiN: H / a-Si: H / (n +) a-Si: H / AI. The results show that the a-Si: H / a-SiN: H interface is an electron accumulation layer with an electron density of 3.2 × 10 ~ (11) / cm ~ 2 and the electron density The applied voltage increases linearly. The experimental results are consistent with the theoretical analysis.