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用梯度凝结法生长掺锌和硒的CdTe晶体能获得与HgCdTe晶格匹配的衬底材料。测量每个掺杂剂的分凝系数后,估算装料组分,以实现一致的、合适的晶格常数,按照这种装料组分生长出的晶体,在固化系数0～0.7范围内,不仅显示出晶格常数非常一致,而且还具有用低位错密度(3×10~(-3)cm~(-2))表征出晶体的高度完整性和高的红外透射率(>62％)。因此.作为HgCdTe外延生长的衬底,掺Zn和Se的CdTe是一种非常有希望的材料。
Growth of CdTe crystals doped with zinc and selenium by gradient condensation method can obtain a substrate material that is lattice matched with HgCdTe. After measuring the segregation coefficient for each dopant, the charge composition is estimated to achieve a consistent, suitable lattice constant. Crystals grown in accordance with this loading component have a cure coefficient in the range of 0 to 0.7, It not only shows very consistent lattice constants but also shows the high degree of completeness and high infrared transmittance (> 62%) of the crystals with low dislocation density (3 × 10 -3 cm -2) . Therefore, as a HgCdTe epitaxial growth substrate, CdTe doped Zn and Se is a very promising material.