On the basis of the Schottky barrier and thermionic emission models, the temperature dependence of barrier height in ZnO varistors is investigated by the I- V c
Lead-free piezoelectric ceramics (1 - x) (Na0.53 K0.404 Li0.066) Nb0.92 Sb0.08 O3 + x SrTiO3 are fabricated by conven-tional solid-state sintering method, and t
An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO3 hereto junctions is reported. The current-voltage curves of these junctions show
Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal-insulator-metal(MIM)structures for stu
Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The nega-tively charge point defects (probably Pb centres o