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近十年来,由于硅栅工艺在MOS集成电路中的应用逐渐普遍,对于介质上淀积多晶硅荡膜的工艺,以及多晶硅淀积层性质的研究己经受到了重视。
In the past ten years, due to the widespread application of silicon gate technology in MOS integrated circuits, research on the process of depositing polycrystalline silicon film on the medium and the properties of polycrystalline silicon deposition layer has been taken seriously.