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在各种半导体辐射探测器中,用硫化镉制成的晶体探测器具有较大的体积灵敏度,是一种有前途的探测体材料,单晶硫化镉是利用光谱纯粉末硫化镉昇华制得的。单晶的生长及性能受到杂质的影响,为此需要对原料及产品进行分析。一般要求分析锌、铜、银、铁、铝、镁、铅、硅等八个杂质元素。化学比色法和极谱法都难以对各种杂质元素同时进行快速测定。灵敏度也不能满足要求。化学光谱分析是较有效的。有关硫化镉中杂质的光谱分析的报导不多,曾将样品用硝酸溶解后将残渣在500℃～600℃马弗炉中转
In a variety of semiconductor radiation detectors, crystal detectors made of cadmium sulfide has a larger volume sensitivity, is a promising detector material, single crystal cadmium sulfide is the use of spectral purity powder obtained by sublimation of cadmium sulfide of. The growth and performance of single crystals are affected by impurities, for which raw materials and products need to be analyzed. Generally require the analysis of zinc, copper, silver, iron, aluminum, magnesium, lead, silicon and other eight impurity elements. Both chemical colorimetric and polarographic methods make it difficult to simultaneously measure various impurity elements simultaneously. Sensitivity can not meet the requirements. Chemical spectral analysis is more effective. There are few reports on the spectral analysis of impurities in cadmium sulfide. Once the sample was dissolved in nitric acid, the residue was transferred to a muffle furnace at 500 ° C to 600 ° C