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Single event effects of 1-T structure pro-grammable read-only memory (PROM) devices fabricated with a 130-nm complementary metal oxide semiconductor-based thin/thick gate oxide anti-fuse process were investi-gated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset (SEU) for radiation-hardened PROMs were measured using a linear energy transfer (LET) ranging from 9.2 to 95.6 MeV cm2 mg-1. The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm2 mg-1, which was lower than the threshold of ～ 20 MeV cm2 mg-1 for an address counter upset owing to the additional triple modularredundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing 209Bi ions with extremely high LET val-ues (～ 91.6 MeV cm2 mg-1) and large ion fluence (～ 1 × 108 ions cm-2). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device. This revealed that the upset occurred in the peripheral circuits of the inteal power source and I/O pairs rather than in the inteal latches and buffers. This was subse-quently confirmed by a 181Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRE`ME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.