【摘 要】
：
Off-stoichiometric ful1-Heusler alloy Co2MnAl thin films with different thicknesses are epitaxially grown on GaAs (001) substrates by molecular-beam epitaxy.The
【机 构】
：
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Acade
论文部分内容阅读
Off-stoichiometric ful1-Heusler alloy Co2MnAl thin films with different thicknesses are epitaxially grown on GaAs (001) substrates by molecular-beam epitaxy.The composition of the films,close to Co1.65Mn1.35Al (CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy.Tunable perpendicular magnetic anisotropy (PMA) from 3.41Merg/cm3 to 1.88Merg/cm3 with the thickness increasing from 10hm to 30hm is found,attributed to the relaxation of residual compressive strain.Moreover,comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction,the CMA electrode has a higher magnetic thermal stability with more volume involved.The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques.This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization.
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