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集成霍尔传感器一般做成硅集成电路型式,用作自动化技术中的测量元件。但是,用硅单晶制做的霍尔传感器在许多性能方面比不上A~ⅡB~Ⅴ族化合物的模拟器件,如灵敏度、快速性、线性度、温度稳定性、噪声级、工作温度区宽度等特性均较差。A~ⅡB~Ⅴ族薄膜型半导体霍尔元件是最有发展前途的,可是用A~ⅡB~Ⅴ族半导体只能做成简单的分立器件,不能制得相应的集成电路。为此,希望得到这样一类集成磁敏器件,它们兼有A~ⅡB~Ⅴ族半导体霍尔传感器和硅集成电路二次转换器的综合功能。这类
Integrated Hall sensors are generally made of silicon integrated circuit type, used as a measuring element in automation technology. However, the Hall sensor made of silicon single crystal can not compare with A ~ ⅡB ~ V compound analog devices in many aspects such as sensitivity, rapidity, linearity, temperature stability, noise level, working temperature zone width Other characteristics are poor. A ~ ⅡB ~ Ⅴ group of thin film semiconductor Hall element is the most promising, but with A ~ ⅡB ~ Ⅴ semiconductor can only be made of a simple discrete devices, can not be made of the corresponding integrated circuits. For this reason, it is hoped that an integrated type of magneto-sensitive device will be obtained which combines the functions of A ~ IIB to V semiconductor Hall sensors and a silicon integrated circuit secondary converter. This class