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用~(16)O(α,α)~(15)O共振散射在E_R=3.042MeV共振,分析样品中氧含量及浓度分布,研究了离子束混合引起的W-Si多层薄膜间的反应及形成的WSi_2薄膜性质与膜中氧杂质浓度的关系,氧的再分布与退火温度的关系。发现随着退火温度升高,氧朝表面扩散。形成硅化物时氧从硅化物中排出,并在表面和硅化物与单晶硅衬界面积累。在350℃下用As离子辐照时,含氧较低的样品直接形成六角WSi_2相,含氧较高的样品没有得到六角WSi_2相。含氧较少的样品,在离子束辐照下混合较均匀,形成的二硅化钨薄膜有较大的晶粒和较小的电阻。
The resonance and scattering of ~ (16) O (α, α) ~ (15) O at the resonance of E_R = 3.042MeV were used to analyze the oxygen content and concentration distribution in the samples. The reaction between W-Si multilayer films caused by ion beam mixing And the relationship between the properties of the formed WSi_2 thin film and the oxygen impurity concentration in the film, the redistribution of oxygen and the annealing temperature. It is found that the oxygen diffuses toward the surface as the annealing temperature increases. Oxygen is released from the silicide when the silicide is formed, and is accumulated on the surface and between the silicide and the silicon single crystal interface. When irradiated with As ion at 350 ℃, the sample with lower oxygen directly formed hexagonal WSi_2 phase, and the sample with higher oxygen did not get hexagonal WSi_2 phase. Samples containing less oxygen were uniformly mixed by ion beam irradiation and the resulting tungsten disilicide films had larger grains and smaller electrical resistance.