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在MOS器件的生产工艺中,常常采用离子注入,来改变阈值电压和以此来控制器件使之为增强型或耗尽型.但同时也会产生一些影响(例如注入后迁移率下降).一、现象采用磷离子注入,做成在一起的NMOSE/D对管.从理论上讲,进行了沟道离子注入的沟道电子迁移率应比没有注入离子的小.即μ_D〈μ_(?),这主要是离子注入后增加了散射中心造成的.测试迁移率分别在饱和区和线性区进行.
In MOS device manufacturing processes, ion implantation is often used to change the threshold voltage and to control the device to either enhanced or depleted, but with some impact (eg, a decrease in mobility after implantation). , The phenomenon of using phosphorus ion implantation, made of together NMOSE / D on the tube in theory, the channel ion implantation channel electron mobility should be smaller than the ion implantation is not small, that μ_D <μ_ (?) , Which is mainly caused by the increase of scattering centers after ion implantation.The test mobility is carried out in saturated and linear regions respectively.