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提出了在ＧａＡｓ液相外延过程中，采用生长高纯度缓冲层、高温烘烤生长系统以及回熔衬底片等工艺，获得具有电参数ｎ＝１０１６～１０１７ｃｍ－３，μ＝４～５×１０３ｃｍ２／ｖ·ｓ（３００Ｋ）的ＧａＡｓ液相外延片．总结出生长高迁移率ＧａＡｓ外延片的制备方法．
In the process of liquid phase epitaxy of GaAs, the technology of growing high-purity buffer layer, high-temperature baking growth system and backfilling substrate is proposed to obtain the piezoelectric film with electrical parameters of n = 1016-1017cm-3, μ = 4-5x103cm2 / v. s (300K) of GaAs liquid phase epitaxial wafers. The preparation method of GaAs epitaxial wafer with high growth rate is summarized.