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应用略加调整的SIPMOS(西门子功率MOS)技术,制作出了由一纵向功率MOS晶体管和一输入放大器组成的一种集成试验结构。输入放大器大大地减小了输入电容,它由一纵向n沟晶体管和一横向p沟晶体管组成。这种方法即使在有高欧姆驱动器工作的情况下也能获得较短的开关时间。
A slightly modified SIPMOS (Siemens Power MOS) technology was used to produce an integrated test structure consisting of a vertical power MOS transistor and an input amplifier. The input amplifier greatly reduces the input capacitance and consists of a vertical n-channel transistor and a lateral p-channel transistor. This method allows for shorter switching times even with high-ohmic drives.