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采用ＳＩＭＳ测定Ａｌ，Ｎｉ等二次离子的束流强度与阻止电压曲线新技术，研究了ＣｅＯ_２对１１００℃恒温氧化条件下形成的Ａｌ_２Ｏ_３型氧化膜和膜／基体界面处的原子结合能的影响，并结合添加ＣｅＯ_２增加了原子间结合能的实验结果，分析了ＣｅＯ_２影响Ａｌ_２Ｏ_３氧化膜生长动力学的微观机制。
The effect of CeO_2 on the atomic binding energy at the interface between Al 2 O 3 oxide film formed at 1100 ℃ and the film / substrate interface was investigated by SIMS, Combined with the addition of CeO 2, the experimental results on the binding energy between atoms were increased. The microscopic mechanism of CeO 2 on the growth kinetics of Al 2 O 3 oxide film was analyzed.