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日本日立公司用离子注入法研制出一种16兆位组合式磁泡存贮器。该器件在钇-镓柘榴石衬底上涂复有磁柘榴石,离子注入磁柘榴石的薄膜表面,并将镍铁强磁合金传输道和注入离子的传输道置于同一芯片,存贮单元为3×3.5μm,约为一般4兆位磁泡的三分之一。组合元件解决了微电子学上的困难。强磁性镍铁合金元件有一个间隙,可阻止清除数据的磁泡反向移动。但是,由于器件容量加大,体积缩小,磁泡变小,所
Hitachi, Japan, using ion implantation method developed a 16 Mbit combination of bubble memory. The device is coated on a yttrium-gallium garnet substrate with magnetic garnet, ions are injected into the surface of the magnetic garnet film, and the ferromagnetic nickel-metal alloy and ion transport channels placed in the same chip, the storage unit Is 3 × 3.5 μm, which is about one third of the general 4 Mbit bubble. The combination of components solves the microelectronic difficulties. Ferromagnetic ferro-nickel alloy elements have a gap that prevents the bubble-clearing data from moving in the opposite direction. However, as the device capacity increases, the volume shrinks and the bubble becomes smaller