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本文深入研究了130nm Silicon-on-Insulator(SOI)技术下的窄沟道n型metal-oxide-semiconductor-field-effect-transistor(MOSFET)器件的总剂量辐照效应.在总剂量辐照下,相比于宽沟道器件,窄沟道器件的阈值电压漂移更为明显.论文利用电荷守恒定律很好地解释了辐照增强的窄沟道效应.另外,本文首次发现,对于工作在线性区的窄沟道器件,辐照产生的浅沟槽隔离氧化物(STI)陷阱正电荷会增加沟道区载流子之间的碰撞概率和沟道表面粗糙度散射,从而导致主沟道晶体管的载流子迁移率退化以及跨导降低.最后,对辐照增强的窄沟效应以及迁移率退化进行了三维器件仿真模拟,仿真结果与实验结果符合得很好.
In this paper, the effect of total dose radiation on a narrow channel n-type metal-oxide-semiconductor-field-effect-transistor (MOSFET) device under 130nm Silicon-on-Insulator (SOI) The threshold voltage shift of narrow-channel devices is more obvious than that of wide-channel devices.The thesis uses the law of conservation of charge to explain the narrow-channel effect enhanced by irradiation well.In addition, we find for the first time that for the linear region Channel device, the shallow trench isolation oxide (STI) trap positive charge generated by the irradiation increases the probability of collision between channel carriers and the channel surface roughness scattering, resulting in a Carrier mobility degradation and transconductance reduction.Finally, the three-dimensional device simulations of the narrowing effect and the degradation of mobility enhanced by irradiation were carried out. The simulation results are in good agreement with the experimental results.