论文部分内容阅读
金硅面垒半导体探测器Si(Au)及漂移型半导体探测器Si(Li)用于测量电子谱已有十几年的历史。F.M.Bernthal等曾利用半导体谱仪成功地测量了短寿命核素~(176)Ta的83个跃迁的电子谱。近年来,采用半导体探测器与一个小型磁谱仪相结合,同时实行能量和动量的选择,成功地实现了在束内转换系数的测量,这是目前在束能谱确定核态特性的重要方法之一。与Si(Li)相比,Si(Au)面垒探测器用于电子谱的测量有很多优点,它制备时间短、比较便宜、较易制薄窗、不易受辐射损伤,可在室温下保存。它的主要缺点是:需要高纯Si材料才能获得较大的灵敏厚度。面垒型探测器直至七十年代中期才获得1.9～3.5kev的
Si (Li) and Si (Li) have been used for measuring electronic spectra for more than ten years. F. M. Bernthal et al. Successfully used the semiconductor spectrometer to successfully measure the electronic spectra of 83 transitions of ~ (176) Ta. In recent years, the combination of a semiconductor detector and a small magnetic spectrometer has been used to measure the conversion coefficient in the beam, which is an important method for determining the characteristics of the nuclear state in the beam energy spectrum at the same time, with the choice of energy and momentum one. Compared with Si (Li), Si (Au) surface barrier detector has many advantages for the measurement of electron spectrum. It has shorter preparation time, cheaper, thinner window and less damage to radiation. It can be stored at room temperature. Its main disadvantage is that high-purity Si materials are required to obtain greater sensitivity thickness. Barrier-type detectors until the mid-seventies received 1.9 ~ 3.5kev