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随着晶体管尺寸不断缩小,CMOS电路的功耗问题变得日益严重。隧穿晶体管是一种基于载流子的隧道效应工作的器件,可以在室温下实现小于60 mV/dec的亚阈值摆幅,具有很好的低功耗应用前景。但常规的隧穿晶体管导通电流比较小,而且具有双极特性。首先介绍了隧穿晶体管的结构和工作原理。其次,针对常规隧穿晶体管问题,综述了国内外研究进展,包括Ge材料隧穿晶体管、纳米线隧穿晶体管等。最后介绍了一种基于隧穿介质层的新型隧穿晶体管,器件仿真结果表明这种新型器件可以有效抑制双极特性。
As transistor sizes continue to shrink, power issues in CMOS circuits have become more serious. The tunneling transistor is a carrier-based tunneling device that can achieve sub-threshold swings of less than 60 mV / dec at room temperature with good low power consumption. However, the conventional tunneling transistor has comparatively small on-current and bipolar characteristics. First introduced the structure of the tunneling transistor and working principle. Secondly, aiming at the problems of conventional tunneling transistor, the research progress at home and abroad is reviewed, including the tunneling transistor of Ge material and the tunneling transistor of nanowire. Finally, a new tunneling transistor based on the tunneling dielectric layer is introduced. The device simulation results show that the new device can effectively suppress bipolar characteristics.