Improvement of Interfacial Adhesion Strength and Thermal Stability of Cu/p-SiC:H/SiOC:H Film Stack b

• 作 者: 刘波 杨吉军 焦国华 徐可为
• 机 构: Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Sci
• 出 处: Plasma Science and Technology
• 发表日期: 2012年07期
• 关键词: aligned migration considerably stack suppress scratch interfacial annealed porou

A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC:H (p-SiC:H) capping barrier (k=3.3) has been developed in the present work.With the introduction of self-aligned barrier (SAB) CuSiN between a Cu film and a p-SiC:H capping barrier,the interfacial thermal stability and the adhesion of the Cu/p-SiC:H film are considerably enhanced.A significant improvement of adhesion strength and thermal stability of Cu/p-SiC:H/SiOC:H film stack has been achieved by optimizing the pre-clean step before cap-layer deposition and by forming the CuSiN-like phase.This cap layer on the surface of the Cu can provide a more cohesive interface and effectively suppress Cu atom migration as well.

A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC: H (p-SiC: H) capping barrier (k = 3.3) has been developed in the present work. Self-aligned barrier (SAB) CuSiN between a Cu film and a p-SiC: H capping barrier, the interfacial thermal stability and the adhesion of the Cu / p-SiC: H film are considerably enhanced. A significant improvement of adhesion strength and thermal stability of Cu / p-SiC: H / SiOC: H film stack has been achieved by optimizing the pre-clean step before cap-layer deposition and by forming the CuSiN-like phase. This cap layer on the surface of the Cu can provide a more cohesive interface and effectively suppress Cu atom migration as well.