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无势垒增强型的金属—半导体—金属光电探测器（ＭＳＭ－ＰＤ）已有过理论分析［１］，而对具有完全晶格匹配势垒增强层的ＭＳＭ－ＰＤ则缺乏理论分析。文章将具有完全晶格匹配势垒增强层的ＭＳＭＰＤ简化为一维模型，并通过理论分析，得出了它的暗电流特性。其结果与实验的相符。
There has been no theoretical analysis of barrier-enhanced metal-semiconductor-metal photodetectors (MSM-PDs) [1], but a lack of theoretical analysis for MSM-PDs with complete lattice-matched barrier enhancement layers. In this paper, MSMPD with complete lattice matching barrier enhancement layer is simplified as a one-dimensional model, and its dark current characteristics are obtained through theoretical analysis. The result is in agreement with the experiment.