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借助于热中子辐照,使Si~(30)激活产生P_(31),从而取得掺杂元素分布极为均匀,并能实现准确掺杂的硅单晶。这类单晶有效地用于功率器件领域。本文介绍这类材料的制备,辐照损伤消除,晶体性能及用于制备高反压晶体管的情况。所制备的单晶断面电阻率不均匀度≤5％,寿命达200～500μs,用该类材料制备的DF-104高反压硅晶体管最高耐压达2300V,比用常规掺杂法单晶制备的管子耐压高200～400V。
With the help of thermal neutron irradiation, Si ~ (30) is activated to produce P_ (31), so as to obtain a uniform distribution of doping elements and to achieve accurate doping of silicon single crystals. Such single crystal is effectively used in the field of power devices. This article describes the preparation of such materials, radiation damage elimination, crystal properties and for the preparation of high-voltage transistors. The prepared single-crystal cross-sectional resistivity non-uniformity ≤ 5%, life expectancy of 200 ~ 500μs, the DF-104 high reverse voltage silicon transistors prepared with this type of material up to a maximum withstand voltage of 2300V, than the conventional doping single crystal preparation The tube pressure high 200 ~ 400V.