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本文介绍一种高稳定介质稳频的11GHz GaAs MESFET振荡器.K波段的小功率固体振荡器,过去大多采用微波体效应二极管或雪崩二极管作为有源器件构成.但是由于体效应振荡器效率低,雪崩管振荡噪声大,把它们用作接收机的本振均感到有不足之处.而用GaAs-MESFET为有源器件做成11GHz振荡器,又采用高稳定度的介质谐振器来稳频,基本上满足了接收机对本振的要求.但限于目前国产GaAs-FET管的性能和介质谐振器的材料性能,此振荡器的电性能指标还不甚理想.
In this paper, we introduce a 11GHz GaAs MESFET oscillator with high stability and medium frequency stability. In the past, the K-band low-power solid-state oscillator was mainly composed of a microwave body-effect diode or an avalanche diode as an active device. However, due to the low efficiency of the body-effect oscillator, Avalanche tube oscillation noise, they are used as a receiver local oscillator are felt inadequate.While GaAs-MESFET active devices made of 11GHz oscillator, and the use of high-stability dielectric resonator to frequency stabilization, Basically meet the requirements of the receiver on the local oscillator.But limited to the current performance of domestic GaAs-FET tube and dielectric resonator material properties, the electrical performance of the oscillator is not ideal.