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3.半导体激光放大器(SLA) 与光纤放大器相比,SLA也具有它自己一些独特的优点。在电注入下,直接带隙跃迁的半导体材料具有很高的增益系数(50～100cm~(-1)),因而在很短的增益区长度(300～500μm)内就可获得25～30dB的内增益,单位长度增益介质获得如此大的增益是任何其他介质无法比拟的;也因为是直接电注入来获取增益,因而其功耗要比光纤放大器小得多,这对实际的通信系统具有重要意义,因为SLA的基本结构和半导体激光器相同,故很容易得到和半导体激光器激射波长相对应的SLA;SLA除了用作放大器外,还可用来作具有增益的
3. Semiconductor Laser Amplifier (SLA) SLA also has its own unique advantages over fiber amplifiers. The semiconductor material with direct bandgap transition has a very high gain factor (50-100 cm -1) under electric injection, so 25-30 dB Internal Gain, Unit Length Gain Media gaining such a large gain is unmatched by any other medium; it also consumes much less power than a fiber amplifier because it is gain by direct electrical injection, which is important for practical communication systems It is easy to get the SLA corresponding to the lasing wavelength of the semiconductor laser because the basic structure of the SLA is the same as that of the semiconductor laser. Besides being used as an amplifier, the SLA can also be used as an amplifier with gain