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本文研究单边超突变结空间电荷区,结的轻掺杂边为高斯分布。推导电势和电场分布、耗尽层宽度以及耗尽层电容。指出在一定电压范围内可用简单的分析式来表征耗尽层宽度和电容。己有的结果可当作本文的特例。由计算机数值求解主要方程,作出特性曲线族,特性及其讨论可供器件设计参考。实验结果与理论曲线符合较好,证明假设的杂质分布是合理的。
In this paper, unilateral hyper-abrupt junction space charge region is studied, and the lightly doped edge of the junction is Gaussian distribution. Derivation of potential and electric field distribution, depletion layer width and depletion layer capacitance. It is pointed out that the depletion layer width and capacitance can be characterized by a simple analytical method in a certain voltage range. The result we have is a special case of this article. Calculate the main equation by computer numerical, make the characteristic curve family, the characteristic and its discussion are available for the device design reference. The experimental results are in good agreement with the theoretical curves, proving that the assumed impurity distribution is reasonable.