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本文用红外吸收谱和统计理论分析低压CVD生长的半绝缘多晶硅(SIPOS)薄膜的组分.SIPOS 薄膜包含SiO 和SiO_2以及它们之间的硅氧化物.而且随着膜中氧浓度的增加,其SiO_2的比例也增加.
In this paper, the compositions of low-pressure CVD grown semi-insulating polysilicon (SIPOS) films are analyzed by infrared absorption spectroscopy and statistical theory.The SiO 2 films contain SiO and SiO 2 and silicon oxide between them, and as the oxygen concentration in the film increases, The proportion of SiO 2 also increases.