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本文从理论和实验两方面对a-Si:H FET的特性进行分析研究。给出了一种关于a-Si:H FET新的理论分析方法,假设a-Si:H能隙中深局域态密度和带尾局域态密度均为指数分布,并且考虑到漏源电压对沟道表面势的影响,采用简便的方法和合理的近似推导出了较全面反映a-Si:H FET特性的解析表达式。同时在实验中,研制了用SiO_2或Si_3N_4作为栅绝缘层的a-Si:H FET,测量得到了不同绝缘层和不同沟道长度的各a-Si:H FET的直流特性。当栅压变化20V时,漏源电流可以变化10~4。最后,对理论计算及实验结果进行了分析和比较。
In this paper, the characteristics of a-Si: H FET are analyzed and studied both theoretically and experimentally. A new theoretical analysis method for a-Si: H FET is given. Assuming that both the deep and the tail state density of the a-Si: H energy gap are exponential, and considering the drain-source voltage On the channel surface potential, a simple method and a reasonable approximation to derive a more comprehensive reflection of a-Si: H FET analytical expression. In the meantime, a-Si: H FET with SiO_2 or Si_3N_4 as the gate insulating layer was developed in the experiment. The DC characteristics of a-Si: H FET with different insulating layers and different channel lengths were measured. When the gate voltage changes 20V, the drain-source current can vary by 10 ~ 4. Finally, the theoretical calculation and experimental results were analyzed and compared.