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对GDa-Si_xC_(1-x):H膜进行高温退火,当退火温度在550℃附近时晶化开始,随退火温度升高晶粒尺寸和晶化范围增大.晶化后的a-Si_xC_(1-x):H膜光吸收系数、光学带隙和电导激活能下降,室温电导率增加.
The crystallization of GDa-Si_xC_ (1-x): H films was carried out at high temperature, and the crystallization started when the annealing temperature was around 550 ℃ .The grain size and crystallization range of GDa-Si_xC_ (1-x): H film light absorption coefficient, optical bandgap and conductivity activation energy decreased, room temperature conductivity increased.