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本文分析了低压转盘ＭＯＣＶＤ生长室中气流的流动特征，首次提出了在高温（７００℃左右）下生长ＩｎＧａＡｌＰ外延层时，抑制Ｉｎ组分脱吸附的“动压力模型”．解释了托盘转速和生长压力等生长参数对Ｉｎ组分控制的影响．
In this paper, the flow characteristics of gas flow in MOCVD growth chamber of low pressure turntable were analyzed. The “dynamic pressure model” was proposed for the first time to suppress the desorption of In in the growth of InGaAlP epitaxial layer at high temperature (about 700 ℃). The effects of growth parameters such as tray rotation speed and growth pressure on In composition control are explained.