A novel high-voltage device structure with an N~+ ring in substrate and the breakdown voltage model

• 作 者: 李琦 朱金鸾 王卫东 岳宏卫 晋良念
• 机 构: Guangxi Key Laboratory of Information and Communication,Guilin University of Electronic Technology,G
• 出 处: 半导体学报
• 发表日期: 2011年12期
• 关键词: breakdown junction coordinates floating drain Poisson drift transistor cylindric

A novel high-voltage device structure with a floating heavily doped N~+ ring embedded in the substrate is reported,which is called FR LDMOS.When the N~+ ring is introduced in the device substrate,the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N~+ ring junction, and the vertical breakdown characteristic is improved significantly.Based on the Poisson equation of cylindrical coordinates,a breakdown voltage model is developed.The numerical results indicate that the breakdown voltage of the proposed device is increased by 56%in comparison to conventional LDMOS.

A novel high-voltage device structure with a floating heavily doped N ~ + ring embedded in the substrate is reported, which is called FR LDMOS. When the N ~ + ring is introduced in the device substrate, the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N ~ + ring junction, and the vertical breakdown characteristic is improved significantly. Based on the Poisson equation of cylindrical coordinates, a breakdown voltage model is developed. The numerical examples indicate that the breakdown voltage of the proposed device is increased by 56% in comparison conventional LDMOS.