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ＳＯＩ材料技术的成熟，为功耗低、抗干扰能力强、集成度高、速度快的ＣＭＯＳ／ＳＯＩ器件的研制提供了条件。分析比较了ＣＭＯＳ／ＳＯＩ器件与体硅器件的差异，介绍了国外薄膜全耗尽ＳＯＩ技术的发展和北京大学微电子所的研究成果。
The maturity of SOI materials technology provides the conditions for the development of CMOS / SOI devices with low power consumption, strong anti-interference ability, high integration and high speed. The differences between CMOS / SOI devices and bulk silicon devices are analyzed and compared. The development of thin film depleted SOI technology abroad and the research results of Peking University Microelectronics Institute are introduced.