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利用新近合成的聚酰亚胺ＬＢ膜定向铁电液晶分子，通过原子力显微镜对经不同亚胺化温度处理的聚酰亚胺ＬＢ膜进行扫描探测，发现相应的ＬＢ膜具有不同的形貌结构，认为高温亚胺化的ＬＢ膜可以提供较高的势垒，这为铁电液晶双稳记忆性的出现提供了可能，而ＬＢ膜的超薄特性有利于开关过程中表面聚积电荷的中和与释放，保证了器件优良的双稳记忆性的最终获得以及微秒量级快速响应的实现。
Using newly synthesized polyimide LB film oriented ferroelectric liquid crystal molecules, scanning electron microscopy (AFM) of polyimide LB films treated with different imidization temperatures showed that the corresponding LB films had different morphological structures, It is considered that high temperature imidized LB films can provide a higher potential barrier, which makes it possible for the occurrence of bistable memory of ferroelectric liquid crystals. The ultrathin properties of LB films facilitate the neutralization of surface accumulated charges during switching Release, to ensure the device to obtain the ultimate bistable memory and micro-second order to achieve rapid response.