论文部分内容阅读
为了研究GaN开关类功率放大器(PA)的温度特性,通过开展一系列的温度测试来研究温度变化对该GaN PA各个性能参数的具体影响.测试结果表明:首先,较高的温度(＞80℃)会使GaN HEMT的电特性发生严重恶化,进而导致器件的性能和可靠性显著下降.其次,对于该开关类GaN PA来说,随着温度的持续升高,其功率附加效率(PAE)显著降低,不能再保持高效率.而且,随着温度的突变和冲击次数的增加,电路出现显著的退化甚至失效.这些都说明了温度的变化对PA的性能产生了很大的影响,开关类PA对温度的变化非常敏感,而且温度冲击对其性能影响更为显著.这些研究为PA的可靠性设计提供了重要指导.“,”In order to study the temperature character of the GaN switch-mode PA,a series of temperature test have been carried out to study the specific impact caused by temperature on various performance parameters of the GaN PA.It can be observed that firstly high temperature (＞ 80℃) can cause serious electrical characteristics deterioration of the GaN HEMT,even resulting in some significant degradation in the performance and reliability for the transistor.Secondly,for this switch-mode GaN PA,its PAE declined significantly with the rise of temperature and can not maintain no longer.Furthermore,with the temperature mutations and increase of shock times,significant degradation or failure has occurred.It can be concluded that temperature variation has great effect on the PA performance.Moreover,the switch-mode PA is very sensitive to the temperature variation,and the thermal shock has more significant influence on the performance of the PA.All these can provide some valuable guidance for PA reliability design.