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半导体基础材料高纯铟中微量杂质元素碳的存在是影响半导体器件质量的因素之一。因此,高纯铟中微量碳的测定已成为生产上需要解决的分析课题。本文介绍的气相色谱法是在纯氧气流中燃烧金属铟试样,使试样中的碳转化为二氧化碳,然后被氧气流载入低温冷阱,二氧化碳被捕集起来。再经过升温脱附、解吸,以纯氢气为载气,流经转化柱,在镍转化剂作用下,于420℃时二氧化碳以及可能存在的一氧化碳转化为甲烷,随氢气流一起经过热导池检测器,进行气相色谱测定,根据色谱峰面积计算出试样中碳的含量。取样量为1克时,方法的检出限约2×10~4%。
The existence of trace impurity element carbon in high purity indium semiconductor material is one of the factors that affect the quality of semiconductor devices. Therefore, the determination of trace amounts of carbon in high-purity indium has become an analytical problem to be solved in production. This article describes the gas chromatography is burning a pure oxygen gas sample of indium, so that the sample of carbon into carbon dioxide, oxygen flow is then loaded into the cryogenic trap, carbon dioxide is trapped together. And then heated desorption, desorption, with pure hydrogen as a carrier gas, through the conversion column, under the effect of nickel conversion agent, at 420 ℃ carbon dioxide and possible carbon monoxide into methane, with hydrogen flow through the thermal conductivity of the pool detector , The gas chromatographic determination, according to the chromatographic peak area to calculate the carbon content of the sample. When the sample volume is 1g, the detection limit of the method is about 2 × 10 ~ 4%.