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本文报道一种新开发的与Ｓｉ平面工艺兼容的准泡发射区基区工艺，以及由此工艺制备的适于大功率微波应用的ＳｉＧｅ异质结双极晶体管（ＨＢＴ）．ＳｉＧｅＨＢＴ的电流增益为５０，ＢＶＣＢＯ为２８Ｖ，ＢＶＥＢＯ为５Ｖ．在９００ＭＨｚ共射Ｃ类工作状态下，连续波输出功率５Ｗ，集电极转化效率６３％，功率增益７．４ｄＢ．
In this paper, a newly developed base-region technology of quasi-bubble emitter that is compatible with Si-plane process and a SiGe Heterojunction Bipolar Transistor (HBT) that is suitable for high-power microwave applications are reported. The current gain of SiGeHBT is 50, BVCBO is 28V and BVEBO is 5V. Under 900MHz C-class working condition, CW output power is 5W, collector conversion efficiency is 63% and power gain is 7.4dB.